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IR’s Battery Protection MOSFETs Offers Cost-Effective, Flexible Solution for Mobile

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International Rectifier, IR, announced the introduction of an extensive portfolio of devices featuring IR’s latest low-voltage MOSFET silicon for lithium-ion battery protection applications including the IRL6297SD dual N-channel DirectFET MOSFET.

Featuring very low on-state resistance (RDS(on)) to significantly cut conduction losses, the new power MOSFETs are available as 20V and 30V devices in N-and P-Channel configurations.

Designed with a maximum gate drive from 12Vgs, these devices are ideal for battery protection circuits with two cells in series. The IRL6297SD offers two 20V N-Channel MOSFETs in a common drain configuration packaged in a compact, thermally efficient DirectFET Small Can package.

“IR’s broad portfolio of MOSFETs for battery management is available in industry standard packages as well as the dual Small Can DirectFET for compact designs. As a result of the low Rds(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save both board space and reduce system cost,” said Stephane Ernoux, Director, IR’s Power Management Devices Business Unit.

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機
特別企劃半導體

稀土棋局下的台灣解方:從供應鏈韌性看關鍵礦物合作新契機

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

稀土與關鍵礦物已成全球科技競爭與經濟安全的重要戰略資源。面對供應鏈高度集中與地緣風險升高,台灣如何透過國際合作、技術替代、戰略儲備與城市採礦,建立自主且具韌性的關鍵礦物供應體系?

關鍵字:MOSFET