Toshiba Memory announced the launch of a new Storage Class Memory (SCM) solution: XL-FLASH. Based on the company’s innovative BiCS FLASH 3D flash memory technology with 1bit-per-cell SLC, XL-FLASH brings low latency and high performance to data center and enterprise storage. Sample shipments will start in September, with mass production expected to begin in 2020.
Classified as SCM (or persistent memory), with the ability to retain its contents like NAND flash memory, XL-FLASH bridges the performance gap that exists between DRAM and NAND. While volatile memory solutions such as DRAM provide the access speed needed by demanding applications, that performance comes at a high cost. As the cost-per-bit and scalability of DRAM levels off, this new SCM (or persistent memory) layer in the memory hierarchy addresses that issue with a high density, cost effective, non-volatile NAND flash memory solution.
Sitting in between DRAM and NAND flash, XL-FLASH brings increased speed, reduced latency and higher storage capacities – at a lower cost than traditional DRAM. XL-FLASH will initially be deployed in an SSD format but could be expanded to memory channel attached devices that sit on the DRAM bus, such as future industry standard non-volatile dual in-line memory modules (NVDIMMs).
