HSINCHU, Taiwan – eMemory and United Microelectronics Corporation today announced that eMemory’s NeoFuse IP has been qualified on UMC’s 28nm High Voltage (HV) platform to target the fast-growing OLED market.
Key customers have completed successful product tape outs using this IP and process, which are ready for mass production.
“In addition to previous implementations on UMC’s HV process platforms, we’re pleased to work with UMC again to extend NeoFuse IP to the 28nm HV process to meet various demands for OLED application to create value for customers,” said Michael Ho, Vice President of Business Development at eMemory.
eMemory logic NVM solutions have been implemented in a wide range of UMC’s HV process nodes for OLED applications. As the leading logic NVM IP provider in the HV process, eMemory has maintained a close relationship with UMC to verify eMemory NVM solutions at early stages of process development.
"eMemory’s NeoFuse IP is a welcome resource for our foundry customers wishing to customize their ICs on our 28nm HV process to serve OLED markets," said T.H. Lin director of IP Development and Design Support division at UMC. "Our two companies have shared positive results through our IP collaboration for UMC’s 55nm, 40nm, and 28nm HV technology platforms, which are optimized to satisfy the performance requirements of display driver applications including OLED."
As OLED displays have taken a dominant position in high-end smartphones, small display driver ICs (SDDIs) have become performance driven. Compared with 55nm or 40nm HV, the 28nm HV process can provide faster data rates for OLED DDIs, higher SRAM density and better power consumption, all of which result in superior image quality with ideal power efficiency. The more advanced node also allows the use of increasingly complex algorithms for powerful display engines.
UMC is the worldwide foundry leader in SDDI, with the most SDDI wafer shipments among all foundries in 2019. The company’s 28nm HV process features the industry’s smallest SRAM bit cells to reduce chip height and area, while its leading 28nm Gate-Last HKMG scheme features superior leakage and dynamic power performance to enhance battery life for mobile devices.
