Toshiba Launches 1200V Silicon Carbide MOSFET That Contributes to High-efficiency Power Supply (2020.10.19) Toshiba Electronic Devices & Storage Corporation has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply. Shipments start today.
The power MOSFET using the SiC, a new material, achieves high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFET, IGBT products
英飞凌第六代 650 V CoolSiC肖特基二极体可快速切换 (2017.10.02) 【德国慕尼黑讯】英飞凌科技(Infineon)推出650 V CoolSiC肖特基二极体G6。这项 CoolSiC二极体系列的最新发展以G5的独特特性为基础,提供可靠性、高品质及更高的效率。CoolSiC G6二极体让600 V与650 V CoolMOS 7系列的功能更臻完善,适用於伺服器、PC电源、电信设备电源及PV变频器等目前与未来的应用